Rysbaev A.S. Hujaniyozov J.B. Rahimov A.M. Fayzullaev R.F. Bekpo'latov I.R.
Features of spectrums of characteristic losses of energy of electrons are in the ionic implanted layers of silicon
Reporter: Rysbaev A.S.
| Abstracts file: | особенности.doc |
| Presentation file: | КРЕМНИЙ_(Si_2014(1)).ppt |
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