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Rysbaev A.S.
Hujaniyozov J.B.
Rahimov A.M.
Fayzullaev R.F.
Bekpo'latov I.R.
Features of spectrums of characteristic losses of energy of electrons are in the ionic implanted layers of silicon
Reporter:
Rysbaev A.S.
Abstracts file:
особенности.doc
Presentation file:
КРЕМНИЙ_(Si_2014(1)).ppt
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