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Rysbaev A.S.   Hujaniyozov J.B.   Rahimov A.M.   Fayzullaev R.F.   Bekpo'latov I.R.  

Features of spectrums of characteristic losses of energy of electrons are in the ionic implanted layers of silicon

Reporter: Rysbaev A.S.

Abstracts file: особенности.doc
Presentation file: КРЕМНИЙ_(Si_2014(1)).ppt


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