Vdovin, Vladimir Il'ich

Senior Research Scientist, Ph.D. in Physics and Mathematics

A.V. Rzhanov Institute of Semiconductor Physics of SB RAS
http://www.isp.nsc.ru/
Russia, 630090, Novosibirsk, Ac. Lavrentiev Ave, 13
Phone: +7(383) 333-27-66, Fax: +7(383) 333-27-71

Report

• Vdovin V.I.^*, Fedina L.I.^*, Гутаковский А.К.^**, Shek E.^***, Sobolev N.^****
  Formation of structural defects in Si wafers irradiated with low-energy electron beam
  ^*A.V. Rzhanov Institute of Semiconductor Physics of SB RAS (Novosibirsk), Russia
  ^**Институт физики полуроводников СО РАН (Novosibirsk), Russia
  ^***Физико-технический институт им. А.Ф. Иоффе (St. Petersburg), Russia
  ^****Физико-технический институт им. А.Ф. Иоффе РАН (St. Petersburg), Russia
  

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