Международная конференция «Математические и информационные технологии, MIT-2016»
Milovanović G.V. Stojanović V. Kevkić T.Application of the homotopy perturbations in the surface-potential-based MOSFET modellingДокладчик: Stojanović V.The paper describes a novel approach in approximate solving the implicit relation between the surface potential and terminal voltage in n-type MOS transistor. Using the homotopy perturbation (HP) method, an approximative solution, which at the same time has a relative simple mathematical form, and a high degree of accuracy was obtained. It is shown that HP approximations, in comparison to a previously used approximate methods, have a many advantages: they can be calculated recursively to arbitrary numerical precision, and the whole procedure can be implemented by using the appropriate software. К списку докладов |